Homo-Junction Bottom-Gate Amorphous In–Ga–Zn–O TFTs With Metal-Induced Source/Drain Regions

Homo-Junction Bottom-Gate Amorphous In–Ga–Zn–O TFTs With Metal-Induced Source/Drain Regions

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A fabrication process Foot Print Kit for homo-junction bottom-gate (HJBG) amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is proposed, in which the a-IGZO section as source/drain (S/D) regions is induced into a low resistance state by coating a thin metal Al film and then performing a thermal annealing in oxygen, with the channel region protected from back etching by depositing and patterning a protective layer.The experimental results show that with a 5 nm Al film and annealing at 200 °C, the sheet resistance of the S/D a-IGZO is reduced to 803 Ω/EI, and keeps stable during a subsequent thermal treatment.In Hayward HCP 3000 Series Parts addition, the thin Al2O3 film generated by the annealing contributes to an improved thermal stability and ambient atmosphere immunity for the fabricated HJBG TFTs.